| Autor: |
Xu, X., Dou, S. X., Wang, X. L., Kim, J. H., Stride, J. A., Choucair, M., Yeoh, W. K., Zheng, R. K., Ringer, S. P. |
| Rok vydání: |
2010 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/0953-2048/23/8/085003 |
| Popis: |
It has been shown that graphene doping is sufficient to lead to an improvement in the critical current density - field performance (Jc(B)), with little change in the transition temperature in MgB2. At 3.7 at% graphene doping of MgB2 an optimal enhancement in Jc(B) was reached by a factor of 30 at 5 K and 10 T, compared to the un-doped sample. The results suggested that effective carbon substitutions by grapheme, 2D nature of grapheme and the strain effect induced by difference thermal coefficient between single grapheme sheet and MgB2 superconductor may play an important role in flux pinning enhancement. |
| Databáze: |
arXiv |
| Externí odkaz: |
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