Structural and paramagnetic properties of dilute Ga1-xMnxN
Autor: | Stefanowicz, Wiktor, Sztenkiel, Dariusz, Faina, Bogdan, Grois, Andreas, Rovezzi, Mauro, Devillers, Thibaut, d'Acapito, Francesco, Navarro-Quezada, Andrea, Li, Tian, Jakiela, Rafal, Sawicki, Maciej, Dietl, Tomasz, Bonanni, Alberta |
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Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Phys. Rev. B 81, 235210 (2010) |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevB.81.235210 |
Popis: | Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system. Comment: 15 pages, 14 figures |
Databáze: | arXiv |
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