| Autor: |
Jozsa, C., Maassen, T., Popinciuc, M., Zomer, P. J., Veligura, A., Jonkman, H. T., van Wees, B. J. |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
Phys. Rev. B 80, 241403(R) (2009) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.80.241403 |
| Popis: |
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length and the diffusion coefficient is observed. We measure nearly identical spin- and charge diffusion coefficients indicating that electron-electron interactions are relatively weak and transport is limited by impurity potential scattering. When extrapolated to the maximum carrier mobilities of 2x10^5 cm^2/Vs, our results predict that a considerable increase in the spin diffusion length should be possible. |
| Databáze: |
arXiv |
| Externí odkaz: |
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