Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

Autor:	Shlimak, I., Golosov, D. I., Butenko, A., Friedland, K. -J., Kravchenko, S. V.
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Ann. Phys. (Berlin) vol. 18, pp. 913-917 (2009)
Druh dokumentu:	Working Paper
DOI:	10.1002/andp.200910400
Popis:	We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot. Comment: 4 LaTeX pages, 2 figures. Annalen der Physik, in press
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0909.1491 Zobrazit plný text záznamu View this record from Arxiv