| Autor: |
Deveaux, M., Amar-Youcef, S., Besson, A., Claus, G., Colledani, C., Dorokhov, M., Dritsa, C., Dulinski, W., Froehlich, I., Goffe, M., Grandjean, D., Heini, S., Himmi, A., Hu, C., Jaaskelainen, K., Muentz, C., Shabetai, A., Stroth, J., Szelezniak, M., Valin, I., Winter, M. |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
Nucl.Instrum.Meth.A624:428-431,2010 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.nima.2010.04.045 |
| Popis: |
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad |
| Databáze: |
arXiv |
| Externí odkaz: |
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