Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

Autor:	Valavanis, A., Lever, L., Evans, C. A., Ikonić, Z., Kelsall, R. W.
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Phys. Rev. B 78, 035420 (2008)
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevB.78.035420
Popis:	Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 angstroms across interfaces is tolerable. Comment: 7 pages, 6 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0908.0557 Zobrazit plný text záznamu View this record from Arxiv