Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
| Autor: | Hayes, Robert R., Kiselev, Andrey A., Borselli, Matthew G., Bui, Steven S., Croke III, Edward T., Deelman, Peter W., Maune, Brett M., Milosavljevic, Ivan, Moon, Jeong-Sun, Ross, Richard S., Schmitz, Adele E., Gyure, Mark F., Hunter, Andrew T. |
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| Rok vydání: | 2009 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than those for InGaAs dots for comparable magnetic field strengths, but both approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for InGaAs). Comment: 5 pages, 5 figures |
| Databáze: | arXiv |
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