Epitaxial Graphene Growth on SiC Wafers
| Autor: | Gaskill, D. Kurt, Jernigan, Glenn G., Campbell, Paul M., Tedesco, Joseph L., Culbertson, James C., VanMil, Brenda L., Myers-Ward, Rachael L., Eddy, Jr., Charles R., Moon, Jeong, Curtis, D., Hu, M., Wong, D., McGuire, C., Robinson, Joshua A., Fanton, Mark A., Stitt, Joseph P., Stitt, Thomas, Snyder, David, Weng, Xiaojun, Frantz, Eric |
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| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | ECS Trans. 19, 117 (2009) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1149/1.3119535 |
| Popis: | An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz. Comment: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures |
| Databáze: | arXiv |
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