Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

Autor:	Bell, C., Harashima, S., Kozuka, Y., Kim, M., Kim, B. G., Hikita, Y., Hwang, H. Y.
Rok vydání:	2009
Předmět:	Condensed Matter - Superconductivity Condensed Matter - Strongly Correlated Electrons
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevLett.103.226802
Popis:	Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost five times as large as the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition. Comment: 4 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0906.5310 Zobrazit plný text záznamu View this record from Arxiv