Defect induced rigidity enhancement in layered semiconductors
| Autor: | Rak, Zs., Mahanti, S. D., Mandal, K. C., Fernelius, N. C. |
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| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | Solid State Communications, 150, 1200-1203 (2010) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1016/j.ssc.2010.04.011 |
| Popis: | We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect$(\text{In}_{\text{i}}^{\text{3+}})$. We find that $\text{In}_{\text{i}}^{\text{3+}}$ dramatically increases the shear stiffness of GaSe, explaining the observed enhancement in the rigidity of In doped p-GaSe. The mechanism responsible for rigidity enhancement discussed here is quite general and applicable to a large class of layered solids with weak interlayer bonding. Comment: 4 figures |
| Databáze: | arXiv |
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