New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

Autor:	Sheka, D. I., Tretyak, O. V., Korol, A. M., Sen, A. K., Mookerjee, A.
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Strongly Correlated Electrons
Druh dokumentu:	Working Paper
Popis:	Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches. Comment: LaTeX, 12 pages, 7 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0905.2142 Zobrazit plný text záznamu View this record from Arxiv