Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states
| Autor: | Glinka, Y. D., Shahbazyan, T. V., Everitt, H. O., Muth, J. F., Roberts, J., Rajagopal, P., Cook, J., Piner, E., Linthicum, K. |
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| Rok vydání: | 2009 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified. Comment: 5 pages, 5 figures |
| Databáze: | arXiv |
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