Controlled growth of InAs nanowires on engineered substrates

Autor:	Roddaro, Stefano, Caroff, Philippe, Biasiol, Giorgio, Rossi, Francesca, Bocchi, Claudio, Nilsson, Kristian, Fröberg, Linus, Wagner, Jakob B., Samuelson, Lars, Wernersson, Lars-Erik, Sorba, Lucia
Rok vydání:	2009
Předmět:	Condensed Matter - Materials Science Condensed Matter - Other Condensed Matter
Zdroj:	Nanotech. 20, 285503 (2009)
Druh dokumentu:	Working Paper
DOI:	10.1088/0957-4484/20/28/285303
Popis:	We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm \mu m}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures. Comment: 5 pages, 5 figures, suppl.mat
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0903.4146 Zobrazit plný text záznamu View this record from Arxiv