Defect scattering in graphene
| Autor: | Chen, Jian-Hao, Cullen, W. G., Jang, C., Fuhrer, M. S., Williams, E. D. |
|---|---|
| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | Physical Review Letters 102, 236805 (2009) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.102.236805 |
| Popis: | Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states. Comment: 16 pages, 5 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|