Formation of Epitaxial MnBi Layers on (Ga,Mn)As

Autor: Adell, J., Adell, M., Ulfat, I., Ilver, L., Sadowski, J., Kanski, J.
Rok vydání: 2009
Předmět:
Druh dokumentu: Working Paper
DOI: 10.1103/PhysRevB.80.075204
Popis: The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs.
Comment: 18 pages, 5 figures
Databáze: arXiv