Formation of Epitaxial MnBi Layers on (Ga,Mn)As
Autor: | Adell, J., Adell, M., Ulfat, I., Ilver, L., Sadowski, J., Kanski, J. |
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Rok vydání: | 2009 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevB.80.075204 |
Popis: | The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs. Comment: 18 pages, 5 figures |
Databáze: | arXiv |
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