Tuning of structure inversion asymmetry by the $\delta$-doping position in (001)-grown GaAs quantum wells

Autor:	Lechner, V., Golub, L. E., Olbrich, P., Stachel, S., Schuh, D., Wegscheider, W., Bel'kov, V. V., Ganichev, S. D.
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1063/1.3156027
Popis:	Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry. Comment: 4 pages 2 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0903.1232 Zobrazit plný text záznamu View this record from Arxiv