| Autor: |
Pershin, Yu. V., Di Ventra, M. |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Phys. Rev. B 79, 153307 (2009) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.79.153307 |
| Popis: |
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed. |
| Databáze: |
arXiv |
| Externí odkaz: |
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