| Autor: |
Huang, Biqin, Jang, Hyuk-Jae, Appelbaum, Ian |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Appl. Phys. Lett. 93, 162508 (2008) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.3006333 |
| Popis: |
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a Silicon device with lateral injector-detector separation over 2 millimeters, and geometrically-induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field. |
| Databáze: |
arXiv |
| Externí odkaz: |
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