Mapping of ion beam induced current changes in FinFETs

Autor:	Weis, C. D., Schuh, A., Batra, A., Persaud, A., Rangelow, I. W., Bokor, J., Lo, C. C., Cabrini, S., Olynick, D., Duhey, S., Schenkel, T.
Rok vydání:	2008
Předmět:	Condensed Matter - Other Condensed Matter Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1016/j.nimb.2009.01.019
Popis:	We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained. Comment: IBMM 2008 conference proceeding
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0809.2113 Zobrazit plný text záznamu View this record from Arxiv