A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures

Autor:	Jaud, M. -A., Barraud, S., Dollfus, P., Jaouen, H.
Rok vydání:	2008
Předmět:	Condensed Matter - Materials Science Condensed Matter - Other Condensed Matter
Druh dokumentu:	Working Paper
DOI:	10.1109/TED.2008.2006116
Popis:	A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated. Comment: 13 pages, 11 figures, 3 tables
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0808.3951 Zobrazit plný text záznamu View this record from Arxiv