Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

Autor:	Kovalenko, V. F., Shutov, S. V., Baganov, Ye. A., Smyikalo, M. M.
Rok vydání:	2008
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1016/j.jlumin.2009.04.017
Popis:	The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from 3x1021 to 6x1022 quantum/(cm2/s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity. Comment: 6 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0808.3070 Zobrazit plný text záznamu View this record from Arxiv