Evidence of Klein tunneling in graphene p-n junctions
| Autor: | Stander, N., Huard, B., Goldhaber-Gordon, D. |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 102, 026807 (2009) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.102.026807 |
| Popis: | Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions. Comment: Major changes made: 1) Taking into account properly the contribution of the resistance of monopolar junctions to the odd part of the resistance. To better present the results we use a fitting parameter for the amplitude of screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9 and 10 was plotted in former version. 3) Figure 5 moved to EPAPS |
| Databáze: | arXiv |
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