Unification of bulk and interface electroresistive switching in oxide systems

Autor:	Ruotolo, A., Leung, C. W., Lam, C. Y., Cheng, W. F., Wong, K. H., Pepe, G. P.
Rok vydání:	2008
Předmět:	Condensed Matter - Strongly Correlated Electrons Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevB.77.233103
Popis:	We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region. Comment: 4 pages, 3 figures, accepted in PRB
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0805.3159 Zobrazit plný text záznamu View this record from Arxiv