Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation
| Autor: | Turcotte, S., Larouche, S., Beaudry, J. -N., Martinu, L., Masut, R. A., Desjardins, P., Leonelli, R. |
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| Rok vydání: | 2008 |
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| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.80.085203 |
| Popis: | The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experimental techniques independently reveal that not only the oscillator strength of the E+ transition but also that of E_ + Delta(so) become larger compared to that of the fundamental gap as the N content increases. Since the same conduction band is involved in both the E_ transition and its split-off replica, these results reveal that adding nitrogen in GaAs1-xNx alloys affects not only the conduction but also the valence bands. Comment: 32 pages, 8 figures, 3 tables. Submitted to Physical Review B on April 18th 2008 |
| Databáze: | arXiv |
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