A Two-Step Etching Method to Fabricate Nanopores in Silicon
Autor: | Wang, G. -J., Chen, W. -Z., Chang, K. J. |
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Rok vydání: | 2008 |
Předmět: | |
Zdroj: | Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007) |
Druh dokumentu: | Working Paper |
Popis: | A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon. Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing) |
Databáze: | arXiv |
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