Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor
Autor: | Andresen, S. E. S., Wu, F., Danneau, R., Gunnarsson, D., Hakonen, P. J. |
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Rok vydání: | 2007 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1063/1.2968123 |
Popis: | We have investigated radio-frequency single-electron transistor (RF-SET) operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At 4.2 K and carrier frequency 754.2 MHz, we reach a charge sensitivity of 2.3e-6 e/Hz^(1/2) over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7e13 Hz^(3/2)/e, which is by one order of magnitude better than for typical RF-SETs. Comment: 4 pages, 3 figures |
Databáze: | arXiv |
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