Non-ohmic spin transport in n-type doped silicon
| Autor: | Jang, Hyuk-Jae, Xu, Jing, Li, Jing, Huang, Biqin, Appelbaum, Ian |
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| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 78, 165329 (2008) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.78.165329 |
| Popis: | We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied across the transport layer is used to vary the confinement potential caused by conduction band-bending and control the dominant transport mechanism between drift and diffusion. By modeling transport in this device with a Monte-Carlo scheme, we simulate the observed spin polarization and Hanle features, showing that the average transit time across the short Si transport layer can be controlled over 4 orders of magnitude with applied voltage. As a result, this modeling allows inference of a long electron spin lifetime, despite the short transit length. Comment: 6 pages, 7 figures |
| Databáze: | arXiv |
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