Shot Noise in Graphene
| Autor: | DiCarlo, L., Williams, J. R., Zhang, Yiming, McClure, D. T., Marcus, C. M. |
|---|---|
| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 100, 156801 (2008). |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.100.156801 |
| Popis: | We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene. Comment: related papers available at http://marcuslab.harvard.edu |
| Databáze: | arXiv |
| Externí odkaz: |
|