Electronic Structures of CaAlSi with Different Stacking AlSi Layers by First-Principles Calculations
Autor: | Kuroiwa, S., Nakashima, A., Miyahara, S., Furukawa, N., Akimitsu, J. |
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Rok vydání: | 2007 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1143/JPSJ.76.113705 |
Popis: | The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60 degrees rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously. Comment: 4 pages, 4 figures, to be published in J. Phys. Soc. Jpn |
Databáze: | arXiv |
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