Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
Autor: | Hotta, Y., Susaki, T., Hwang, H. Y. |
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Rok vydání: | 2007 |
Předmět: | |
Zdroj: | Phys. Rev. Lett. 99, 236805 (2007) |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevLett.99.236805 |
Popis: | We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_2/SrO/TiO_2 interface, formed by inserting a single layer of bulk metallic SrVO_3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions. Comment: 18 pages, 5 figures |
Databáze: | arXiv |
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