Raman Fingerprint of Charged Impurities in Graphene
Autor: | Casiraghi, C., Pisana, S., Novoselov, K. S., Geim, A. K., Ferrari, A. C. |
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Rok vydání: | 2007 |
Předmět: | |
Zdroj: | Appl. Phys. Lett. 91, 233108 (2007) |
Druh dokumentu: | Working Paper |
DOI: | 10.1063/1.2818692 |
Popis: | We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron. Comment: 3 pages, 5 figures |
Databáze: | arXiv |
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