Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
| Autor: | Dhara, S., Magudapathy, P., Kesavamoorthy, R., Kalavathi, S., Sastry, V. S., Nair, K. G. M., Hsu, G. M., Chen, L. C., Chen, K. H., Santhakumar, K., Soga, T. |
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| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Applied Physics Letters 88 (24) 241904 (2006) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.2186101 |
| Popis: | InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase. Comment: 11 pages, 4 figures, Journal |
| Databáze: | arXiv |
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