Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
| Autor: | Dhara, S., Magudapathy, P., Kesavamoorthy, R., Kalavathi, S., Nair, K. G. M., Hsu, G. M., Chen, L. C., Chen, K. H., Santhakumar, K., Soga, T. |
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| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | Applied Physics Letters 87 (26) 281915 (2005) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.2099542 |
| Popis: | Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases. Comment: 9 pages, 4 figuresn Journal |
| Databáze: | arXiv |
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