| Autor: |
Hai, Pham Nam, Sakata, Yusuke, Yokoyama, Masafumi, Ohya, Shinobu, Tanaka, Masaaki |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
Phys. Rev. B 77, 214435 (2008) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.77.214435 |
| Popis: |
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a GaAs matrix, and acts as a spin injector and a spin detector. Although the barrier height of the GaAs/MnAs interface was found to be very small, relatively large magnetoresistance was observed. This result shows that by using ballistic transport, we can realize a large spin valve effect without inserting a high tunnel barrier at the ferromagnetic metal / semiconductor interface. |
| Databáze: |
arXiv |
| Externí odkaz: |
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