Effect of rf power on the electrical properties of glow-discharge a-Si:H
| Autor: | TOLUNAY, Hüseyin |
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| Jazyk: | turečtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Volume: 26, Issue: 1 25-28 Turkish Journal of Physics |
| ISSN: | 1300-0101 1303-6122 |
| Popis: | Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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