InGaAs nanowire MOSFETs with ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V
| Autor: | Zota, Cezar B., Lindelow, Fredrik, Wernersson, Lars-Erik, Lind, Erik |
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| Jazyk: | angličtina |
| Zdroj: | 2016 IEEE Symposium on VLSI Technology |
| DOI: | 10.1109/vlsit.2016.7573418 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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