0.4-µm InP/InGaAs DHBT with a 380-GHz fT, > 600-GHz fmax and BVCE0 > 4.5V

Autor: N. Davy, V. Nodjiadjim, M. Riet, C. MIsmer, M. Deng, C. Mukherjee, J. Renaudier, C. Maneux
Rok vydání: 2021
Zdroj: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
DOI: 10.1109/bcicts50416.2021.9682209
Databáze: OpenAIRE