| Popis: |
Interface properties of GaAs/anodic oxide (AO)/Al structures with various anodic oxide films which are grown by using different electrolytes under constant current conditions are studied. The C-U, I-U, and thermally stimulated current measurements for these devices are carried out at various temperatures. Trap energy levels which are determined from TSC measurements indicate that there are As(Ga) antisite and probably As interstitial-type defects at the interface depending on the preparation techniques. |
