Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal
| Autor: | Backe, H., Krambrich, D., Lauth, W., Andersen, Kristoffer, Hansen, John Lundsgaard, Uggerhøj, Ulrik Ingerslev |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Backe, H, Krambrich, D, Lauth, W, Andersen, K, Hansen, J L & Uggerhøj, U I 2013, ' Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal ', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 309, pp. 37-44 . https://doi.org/10.1016/j.nimb.2013.03.047 |
| DOI: | 10.1016/j.nimb.2013.03.047 |
| Popis: | Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission spectra from a crystalline undulator at electron beam energies of 270 and 855 MeV. The epitaxially grown graded composition strained layer Si1-xGex undulator had 4-period with a period length View the MathML source. Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation emission from finite single arc elements, taking into account also coherence effects, suggest that evidence for a weak undulator effect has been observed for the first time for electrons. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|