Autor:	Vivek, Mootheri, Alessandra, Leonhardt, Devin, Verreck, Inge, Asselberghs, Cedric, Huyghebaert, Stefan, Degendt, Iuliana, Radu, Dennis, Lin, Marc M, Heyns
Rok vydání:	2021
Zdroj:	Nanotechnology. 32(13)
ISSN:	1361-6528
Popis:	2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::3f0600a8a2a31ac3e6594dcfbacee2c5 https://pubmed.ncbi.nlm.nih.gov/33410418 Zobrazit plný text záznamu