| Autor: |
Sepideh, Gorji Ghalamestani, Martin, Ek, Bahram, Ganjipour, Claes, Thelander, Jonas, Johansson, Philippe, Caroff, Kimberly A, Dick |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Nano letters. 12(9) |
| ISSN: |
1530-6992 |
| Popis: |
The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ∼0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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