| Autor: |
Chulmin, Kim, Moonsoo, Sung, Soo Yeon, Kim, Byung Chul, Lee, Yeonsu, Kim, Doyoon, Kim, Yeeun, Kim, Youkyung, Seo, Christoforos, Theodorou, Gyu-Tae, Kim, Min-Kyu, Joo |
| Rok vydání: |
2021 |
| Zdroj: |
ACS applied materialsinterfaces. 13(16) |
| ISSN: |
1944-8252 |
| Popis: |
When thickness-dependent carrier mobility is coupled with Thomas-Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. Herein, we report the restricted conducting channel migration in 2D multilayer ReS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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