| Autor: |
Mathew J, Cherukara, Daniel S, Schulmann, Kiran, Sasikumar, Andrew J, Arnold, Henry, Chan, Sridhar, Sadasivam, Wonsuk, Cha, Jorg, Maser, Saptarshi, Das, Subramanian K R S, Sankaranarayanan, Ross J, Harder |
| Rok vydání: |
2018 |
| Zdroj: |
Nano letters. 18(3) |
| ISSN: |
1530-6992 |
| Popis: |
Emerging two-dimensional (2-D) materials such as transition-metal dichalcogenides show great promise as viable alternatives for semiconductor and optoelectronic devices that progress beyond silicon. Performance variability, reliability, and stochasticity in the measured transport properties represent some of the major challenges in such devices. Native strain arising from interfacial effects due to the presence of a substrate is believed to be a major contributing factor. A full three-dimensional (3-D) mapping of such native nanoscopic strain over micron length scales is highly desirable for gaining a fundamental understanding of interfacial effects but has largely remained elusive. Here, we employ coherent X-ray diffraction imaging to directly image and visualize in 3-D the native strain along the (002) direction in a typical multilayered (∼100-350 layers) 2-D dichalcogenide material (WSe |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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