| Autor: |
Ahmad, Umar, R I, Badran, A, Al-Hajry, S, Al-Heniti |
| Rok vydání: |
2015 |
| Zdroj: |
Journal of nanoscience and nanotechnology. 15(7) |
| ISSN: |
1533-4899 |
| Popis: |
This paper reports the temperature-dependant electrical characteristics of n-ZnO hexagonal nanorods/p-Si heterojunction diodes. The n-ZnO hexagonal nanorods were grown on p-Si substrate by a simple thermal evaporation process using metallic zinc powder in the presence of oxygen. The spectroscopic characterization revealed well-crystalline nanorods, quasi-aligned to the substrate and possessing hexagonal shape. The as-grown nanorods exhibited a strong near-band-edge emis- sion with very weak deep-level emission in the room-temperature photoluminescence spectrum, confirming good optical properties. Furthermore, the electrical properties of as-grown ZnO nanorods were examined by fabricating n-ZnO/p-Si heterojunction assembly and the I-V characteristics of the fabricated heterojunction assembly were investigated at different temperatures. The fabricated n-ZnO/p-Si heterojunction diodes exhibited a turn-on voltage of ~5 V at different temperatures with a mean built-in-potential barrier of 1.12 eV. Moreover, the high values of quality factor obtained from I-V analysis suggested a non-ideal behavior of Schottky junction. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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