| Autor: |
Riley, Hanus, Sonal V, Rangnekar, Shahab, Mollah, Kamal, Hussain, Nicholas, Hines, Eric, Heller, Mark C, Hersam, Asif, Khan, Samuel, Graham |
| Rok vydání: |
2021 |
| Zdroj: |
ACS applied materialsinterfaces. 13(35) |
| ISSN: |
1944-8252 |
| Popis: |
Measuring the maximum operating temperature within the channel of ultrawide band-gap transistors is critically important since the temperature dependence of the device reliability sets operational limits such as maximum operational power. Thermoreflectance imaging (TTI) is an optimal choice to measure the junction temperature due to its submicrometer spatial resolution and submicrosecond temporal resolution. Since TTI is an imaging technique, data acquisition is orders of magnitude faster than point measurement techniques such as Raman thermometry. Unfortunately, commercially available LED light sources used in thermoreflectance systems are limited to energies less than ∼3.9 eV, which is below the band gap of many ultrawide band-gap semiconductors (4.0 eV). Therefore, the semiconductors are transparent to the probing light sources, prohibiting the application of TTI. To address this thermal imaging challenge, we utilize an MoS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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