The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga
| Autor: | Mostafa, Baghbanzadeh, Priscilla F, Pieters, Li, Yuan, Darrell, Collison, George M, Whitesides |
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| Rok vydání: | 2018 |
| Zdroj: | ACS nano. 12(10) |
| ISSN: | 1936-086X |
| Popis: | This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon-halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form M |
| Databáze: | OpenAIRE |
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