The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga

Autor:	Mostafa, Baghbanzadeh, Priscilla F, Pieters, Li, Yuan, Darrell, Collison, George M, Whitesides
Rok vydání:	2018
Zdroj:	ACS nano. 12(10)
ISSN:	1936-086X
Popis:	This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon-halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form M
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid________::dcca2e0dd9dc6e2d1f260dc201affc26 https://pubmed.ncbi.nlm.nih.gov/30226988 Zobrazit plný text záznamu