| Autor: |
Younsoo, Kim, Sang Yeol, Kang, Jae Hyoung, Choi, Jae Soon, Lim, Min Young, Park, Suk-Jin, Chung, Jaegwan, Chung, Hyung Ik, Lee, Ki Hong, Kim, Yong Koo, Kyoung, Sung, Heo, Cha Young, Yoo, Ho-Kyu, Kang |
| Rok vydání: |
2011 |
| Zdroj: |
Journal of nanoscience and nanotechnology. 11(9) |
| ISSN: |
1533-4880 |
| Popis: |
To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TiN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TiN oxidation and a seed layer of ZrO2 growth. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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