Autor: |
L, Gagliano, M, Kruijsse, J D D, Schefold, A, Belabbes, M A, Verheijen, S, Meuret, S, Koelling, A, Polman, F, Bechstedt, J E M, Haverkort, E P A M, Bakkers |
Rok vydání: |
2018 |
Zdroj: |
Nano letters. 18(6) |
ISSN: |
1530-6992 |
Popis: |
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al |
Databáze: |
OpenAIRE |
Externí odkaz: |
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