| Autor: |
Bernhard, Mandl, Mario, Keplinger, Maria E, Messing, Dominik, Kriegner, Reine, Wallenberg, Lars, Samuelson, Günther, Bauer, Julian, Stangl, Václav, Holý, Knut, Deppert |
| Rok vydání: |
2017 |
| Zdroj: |
Nano letters. 18(1) |
| ISSN: |
1530-6992 |
| Popis: |
Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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